説明
説明なし構成
<span style="font-size: 20pt;">Disco Corporation DFL7340 Fully Automatic Laser Saw</span> Made in JapanAir: 0.5 MPa 250 L/min (ANR)Clean Air: 0.5 MPa 10 L/min (ANR)Water: 0.4 MPa or less 8 L/minEquipped with universal chuck which can be used for a maximum of 8" waferLaser Head Hours: 673 This unit was used for a qualification after its installation.Manufacturer Name: Disco Corporation Year:2017Serial Number: NH1155Model: DFL7340 Voltage:200-220 VOLTSFrequency:50/60 HERTZPhase:3 Current:10 AMPSRecommended Packaging Form: CRATE Dimensions:Standard Overall:73 x 41 x 86 IN - 4431 LBS Metric1854.20 x 1041.40 x 2184.40 mm - 2009.90 kgOEMモデルの説明
The DFL7341 is a fully automatic laser saw for Φ8-inch wafers which has seen wide use in applications such as LED sapphire substrates and silicon microphones. It uses a Stealth Dicing™ process that makes it possible for brittle materials such as SiC and GaN to be singulated without chipping.ドキュメント
ドキュメントなし
DISCO
DFL7340
検証済み
カテゴリ
Scribing, Cutting, Dicing
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
21055
ウェーハサイズ：
不明
ヴィンテージ：
2017
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同様のリスト
すべて表示
DISCO
DFL7340
検証済み
カテゴリ
Scribing, Cutting, Dicing
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
21055
ウェーハサイズ：
不明
ヴィンテージ：
2017
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
<span style="font-size: 20pt;">Disco Corporation DFL7340 Fully Automatic Laser Saw</span> Made in JapanAir: 0.5 MPa 250 L/min (ANR)Clean Air: 0.5 MPa 10 L/min (ANR)Water: 0.4 MPa or less 8 L/minEquipped with universal chuck which can be used for a maximum of 8" waferLaser Head Hours: 673 This unit was used for a qualification after its installation.Manufacturer Name: Disco Corporation Year:2017Serial Number: NH1155Model: DFL7340 Voltage:200-220 VOLTSFrequency:50/60 HERTZPhase:3 Current:10 AMPSRecommended Packaging Form: CRATE Dimensions:Standard Overall:73 x 41 x 86 IN - 4431 LBS Metric1854.20 x 1041.40 x 2184.40 mm - 2009.90 kgOEMモデルの説明
The DFL7341 is a fully automatic laser saw for Φ8-inch wafers which has seen wide use in applications such as LED sapphire substrates and silicon microphones. It uses a Stealth Dicing™ process that makes it possible for brittle materials such as SiC and GaN to be singulated without chipping.ドキュメント
ドキュメントなし