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THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450
    説明
    説明なし
    構成
    Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
    OEMモデルの説明
    The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
    ドキュメント

    ドキュメントなし

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    verified-listing-icon

    検証済み

    カテゴリ
    SEM / FIB

    最終検証: 28日前

    主なアイテムの詳細

    状態:

    Refurbished


    稼働ステータス:

    不明


    製品ID:

    117461


    ウェーハサイズ:

    不明


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    同様のリスト
    すべて表示
    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    SEM / FIB
    ヴィンテージ: 0状態: 改修済み
    最終確認28日前

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    verified-listing-icon
    検証済み
    カテゴリ
    SEM / FIB
    最終検証: 28日前
    listing-photo-431d162e6c7a4823a8a36545a8294c65-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    主なアイテムの詳細

    状態:

    Refurbished


    稼働ステータス:

    不明


    製品ID:

    117461


    ウェーハサイズ:

    不明


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    説明
    説明なし
    構成
    Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
    OEMモデルの説明
    The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
    ドキュメント

    ドキュメントなし

    同様のリスト
    すべて表示
    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    SEM / FIBヴィンテージ: 0状態: 改修済み最終検証:28日前