説明

Platform: EVG850 Production Bonder, tooled for 300mm wafers (SOI & wafer direct bonding) Bonding method: Low-pressure prebonding station (point contact, up to 5N) + 300mm Si/SiO₂ bond chuck Plasma activation: LowTemp® Plasma Chamber with dual RF generators (HF + LF, up to 200W each), Plasma Activated Bonding License (incl. SiGen IP rights) + Metal Ion Free Activation option Wafer cleaning: Megasonic + brush cleaning station with DI-water rinse/spin dry Inspection: High-res IR inspection (1024x1024) + Automatic Void Recognition software Automation: FOUP load ports (SEMI E84/E87 compliant), cassette-to-cassette handling, wafer mapping

構成

EVG850 Production Bonder — SOI & Wafer Direct Bonding Wafer size: Tooled for 300mm (reconfigurable to 200–300mm on several modules) Base System • Bond station with autoload cassette-to-cassette handling, up to 300mm • Two open cassette Ergo-Loading/unloading stations (manual FOUP loading; full FOUP automation optional) • Optical prealigner + mechanical flat/notch alignment in bond chamber • Robot endeffector with backside vacuum handling • Teflon-coated wafer-contact parts; encapsulated, no-metal-contamination design (FFU-compatible) • Separated control unit/operator interface (external rack); fully computer-controlled manual & automatic processes, programmable recipes, remote diagnostics via modem Bonding & Process Modules • Prebonding station (low-pressure, point contact): reconfigurable 200–300mm in <30 min, high vacuum (10⁻³ mbar, turbo pump optional), point contact force up to 5N • Bond chuck, 300mm, for Si/SiO₂ bonding — lapped Teflon surface, integrated spacers/alignment • Vacuum system for bond chamber — diaphragm pump, dual purge gas lines, controlled vacuum 5–400 Torr • LowTemp® Plasma Chamber — ex-situ plasma activation, 200–300mm reconfigurable, PC-controlled (Windows 2000+), high vacuum with optional turbo pump • Plasma Activated Bonding License — includes SiGen IP-based process rights, baseline recipes for Si-SiO₂ and SiO₂-SiO₂ fusion bonding • Metal Ion Free Activation module (for SOI/compound semiconductor applications) • Activation chuck, 300mm, ex-situ, <30 min changeover • Process gas manifold (4 lines), mass flow controller (1–200 sccm) • High- and Low-Frequency RF generators w/ matching units (up to 200W each, RS232 control) Cleaning • Cleaning station: DI-water rinse/spin dry (up to 3000 rpm), separate/simultaneous cleaning of both bond partners • Vacuum system for plasma chamber (dry pump, dual purge lines, 50 mTorr–400 Torr) • Brush unit for single-side cleaning (retrofit-compatible) • Megasonic cleaning system (1 MHz oscillator/transducer, ~60 sec cycle) • Chemistry line (for dilute NH₄OH <2%; external tank not included) Inspection & Software • High-resolution IR inspection station (1024x1024, CCD camera, Tiff 6.0 storage, tooled for 300mm) • Rejected wafer sorting software • Automatic Void Recognition — auto void detection, exclusion zone settings, selectable reject criteria, summary reporting • Automation & Facility • FOUP load ports (SEMI E84/E87 compliant, wafer mapping capable) • ION bars (2x, ESD-safe ionization) • Class 1 mini-environment (filter-fan unit, boron-free PFA filters)

OEMモデルの説明

Automated production bonding system for a wide range of fusion/molecular wafer bonding applications SOI wafers are a promising new basic material for the microelectronics industry to produce faster and higher-performance microelectronic devices. Wafer bonding, as one key enabling technology for the SOI wafer fabrication process, achieves high-quality single-crystal silicon films on insulating substrates. With the EVG850 SOI production bonding system, all essential steps for SOI bonding – from cleaning and alignment to pre-bonding and IR-inspection – are combined. Thus, the EVG850 assures a high-yield production process for void-free SOI wafers up to 300 mm sizes. Being the only production system built to operate in high-throughput, high-yield environments, the EVG850 has been established as the industry standard in the SOI wafer market.