説明
説明なし構成
CVD SYSTEM, 2 CHAMBER WSi ProcessOEMモデルの説明
Chemical vapor deposition (CVD) system designed for tungsten (W) and tungsten silicide (WSi) processes on 200-mm wafers. It features two process chambers and is optimized for electrode and wiring manufacturing. The system employs a ramp heating method, allowing it to accommodate products requiring different temperature zones, making it suitable for low-volume, multi-product manufacturing. Additionally, it utilizes plasma-free dry cleaning with chlorine trifluoride (ClF₃), which extends wet cleaning cycles and reduces running costs.ドキュメント
ドキュメントなし
TEL / TOKYO ELECTRON
MB2-730 HT-HT
検証済み
カテゴリ
CVD
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
56416
ウェーハサイズ：
不明
ヴィンテージ：
1996
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
TEL / TOKYO ELECTRON
MB2-730 HT-HT
カテゴリ
CVD
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
56416
ウェーハサイズ：
不明
ヴィンテージ：
1996
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
CVD SYSTEM, 2 CHAMBER WSi ProcessOEMモデルの説明
Chemical vapor deposition (CVD) system designed for tungsten (W) and tungsten silicide (WSi) processes on 200-mm wafers. It features two process chambers and is optimized for electrode and wiring manufacturing. The system employs a ramp heating method, allowing it to accommodate products requiring different temperature zones, making it suitable for low-volume, multi-product manufacturing. Additionally, it utilizes plasma-free dry cleaning with chlorine trifluoride (ClF₃), which extends wet cleaning cycles and reduces running costs.ドキュメント
ドキュメントなし