説明
PlasmaTherm Versaline DSE-III Deep Silicon Etcher Single chamber with single wafer semi-auto load lock Operational, GUI PC and CTC PC in e-rack are not working. Low Maintenance Package Through-wall panel is not included構成
Main specification (ask for details): - Application: deep silicon etch - Substrate size: 4”,6”,8”. Mechanical clamp -40C..+40C with Affinity chiller - Semi-auto load lock, single wafer - Plasma-Therm ICP-II DSE 3-turn source - 3.5kW, 2MHz ICP RF package (5kW limited to 3.5kW) - High-Speed Process Modulation w/ 1-100kHz DBS RF package for DSE - Heated chamber 180C - Optical End Point Detection - Gas box with 4 lines (C4F8, SF6, Ar, O2. 400/600/50/50sccm) - Fast gas switching option for DSE - User terminal mobile cart - Edwards ih80 dry pump - Edwards xds35i load lock dry pump - Edwards 1300l/s STPA turbo - 380VAC 3 phase (with transformer) - Low Maintenance Package - Through-wall panel is not includedOEMモデルの説明
"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."ドキュメント
ドキュメントなし
PLASMATHERM
VERSALINE ICP
検証済み
カテゴリ
Dry / Plasma Etch
最終検証： 16日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
115315
ウェーハサイズ：
4"/100mm, 6"/150mm, 8"/200mm
ヴィンテージ：
2012
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
PLASMATHERM
VERSALINE ICP
カテゴリ
Dry / Plasma Etch
最終検証： 16日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
115315
ウェーハサイズ：
4"/100mm, 6"/150mm, 8"/200mm
ヴィンテージ：
2012
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
PlasmaTherm Versaline DSE-III Deep Silicon Etcher Single chamber with single wafer semi-auto load lock Operational, GUI PC and CTC PC in e-rack are not working. Low Maintenance Package Through-wall panel is not included構成
Main specification (ask for details): - Application: deep silicon etch - Substrate size: 4”,6”,8”. Mechanical clamp -40C..+40C with Affinity chiller - Semi-auto load lock, single wafer - Plasma-Therm ICP-II DSE 3-turn source - 3.5kW, 2MHz ICP RF package (5kW limited to 3.5kW) - High-Speed Process Modulation w/ 1-100kHz DBS RF package for DSE - Heated chamber 180C - Optical End Point Detection - Gas box with 4 lines (C4F8, SF6, Ar, O2. 400/600/50/50sccm) - Fast gas switching option for DSE - User terminal mobile cart - Edwards ih80 dry pump - Edwards xds35i load lock dry pump - Edwards 1300l/s STPA turbo - 380VAC 3 phase (with transformer) - Low Maintenance Package - Through-wall panel is not includedOEMモデルの説明
"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."ドキュメント
ドキュメントなし