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PLASMATHERM VERSALINE ICP
    説明
    説明なし
    構成
    Parameter DSE IV Specification Si Etch Rate (µm/min) ≥7.5 Etch Depth 350 µm CD size 1020 x 1020 µm Aspect ratio 1:3 Si exposed area ~70% Si: PR Selectivity >100:1 Si: Si02 Selectivity >150:1 Sidewall profile 90 ± 20 Sidewall roughness (µm) <2 Within wafer Non-uniformity @ 6" <±5% excluding edge exclusion 6mm
    OEMモデルの説明
    "The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."
    ドキュメント

    PLASMATHERM

    VERSALINE ICP

    verified-listing-icon

    検証済み

    カテゴリ
    Dry / Plasma Etch

    最終検証: 60日以上前

    主なアイテムの詳細

    状態:

    New


    稼働ステータス:

    Deinstalled / Crated


    製品ID:

    109525


    ウェーハサイズ:

    6"/150mm


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    同様のリスト
    すべて表示
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etch
    ヴィンテージ: 2012状態: 中古
    最終確認16日前

    PLASMATHERM

    VERSALINE ICP

    verified-listing-icon
    検証済み
    カテゴリ
    Dry / Plasma Etch
    最終検証: 60日以上前
    listing-photo-64dd60aab40843768183e988b2918933-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    主なアイテムの詳細

    状態:

    New


    稼働ステータス:

    Deinstalled / Crated


    製品ID:

    109525


    ウェーハサイズ:

    6"/150mm


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    説明
    説明なし
    構成
    Parameter DSE IV Specification Si Etch Rate (µm/min) ≥7.5 Etch Depth 350 µm CD size 1020 x 1020 µm Aspect ratio 1:3 Si exposed area ~70% Si: PR Selectivity >100:1 Si: Si02 Selectivity >150:1 Sidewall profile 90 ± 20 Sidewall roughness (µm) <2 Within wafer Non-uniformity @ 6" <±5% excluding edge exclusion 6mm
    OEMモデルの説明
    "The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."
    ドキュメント
    同様のリスト
    すべて表示
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etchヴィンテージ: 2012状態: 中古最終検証:16日前
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etchヴィンテージ: 0状態: 中古最終検証:60日以上前
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etchヴィンテージ: 0状態: 中古最終検証:60日以上前