説明
Dry Etcher Parts included:- -Main body. -SMIF Loader -Controller -CRT -Keyboard -Through the wall config. -SUS Front panel -Al Side panel: Ni Coated -Pump interface Gas system: (5) MFC Tylan FC-2900 CF4, C12, N2, 02, NF3 Quartz tube protection C mictube ESC Universal chuck, 8" Water auxiliaries This isotropic etching system applicable to wafers of diameter 75 mm to 300 mm has been favoured by customers for many years. While having many achievements for round etching including Si and SiO2, recently this system has also been used for the improvement of device properties by using its remote plasma feature. Its plasma damage-free technology contributes to the designing of high-quality devices. Features ・Isotropic etching By generating plasma outside of the chamber and performing the etching processing with radical compounds only, this system is capable of perfect isotropic etching processing. This system is applied for round processing for trench pattern opening sections. ・Plasma damage-free feature Due to the long distance from a plasma to a wafer, the ion generated within the plasma is deactivated and does not impact the wafer. This feature is applied to removal of damaged layers after RIE processing.構成
構成なしOEMモデルの説明
提供なしドキュメント
ドキュメントなし
SHIBAURA
CDE 80
検証済み
カテゴリ
Dry / Plasma Etch
最終検証： 30日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Deinstalled
製品ID：
114735
ウェーハサイズ：
8"/200mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SHIBAURA
CDE 80
カテゴリ
Dry / Plasma Etch
最終検証： 30日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Deinstalled
製品ID：
114735
ウェーハサイズ：
8"/200mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Dry Etcher Parts included:- -Main body. -SMIF Loader -Controller -CRT -Keyboard -Through the wall config. -SUS Front panel -Al Side panel: Ni Coated -Pump interface Gas system: (5) MFC Tylan FC-2900 CF4, C12, N2, 02, NF3 Quartz tube protection C mictube ESC Universal chuck, 8" Water auxiliaries This isotropic etching system applicable to wafers of diameter 75 mm to 300 mm has been favoured by customers for many years. While having many achievements for round etching including Si and SiO2, recently this system has also been used for the improvement of device properties by using its remote plasma feature. Its plasma damage-free technology contributes to the designing of high-quality devices. Features ・Isotropic etching By generating plasma outside of the chamber and performing the etching processing with radical compounds only, this system is capable of perfect isotropic etching processing. This system is applied for round processing for trench pattern opening sections. ・Plasma damage-free feature Due to the long distance from a plasma to a wafer, the ion generated within the plasma is deactivated and does not impact the wafer. This feature is applied to removal of damaged layers after RIE processing.構成
構成なしOEMモデルの説明
提供なしドキュメント
ドキュメントなし