説明
説明なし構成
This highly capable semiconductor etch tool was sparingly used (only a few hours per week) and meticulously maintained under service agreements throughout its operational life. Before decommissioning, it was in excellent working condition and has since been stored carefully. Key Features: Cassette to Cassette Handling Designed for silicon etching with gases plumbed for SF6, C4F8, N2, O2, and Ar Includes an add-on module for XeF2 isotropic silicon etching Tooling compatible with both 100 mm and 150 mm wafers Unique cyclical etching capability: alternating phases of etch and passivation enable deep, highly anisotropic etching results Capable of etching depths exceeding 500 microns and aspect ratios up to 20:1 with exceptional precision This STS ASE system remains a top choice for deep reactive-ion etching applications requiring fine control and high aspect ratio trenches, widely used in MEMS and microfabrication research. Contact for further details and pricing.OEMモデルの説明
提供なしドキュメント
ドキュメントなし
検証済み
カテゴリ
Dry / Plasma Etch
最終検証： 29日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
136806
ウェーハサイズ：
不明
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
ASE ICP DRIE
カテゴリ
Dry / Plasma Etch
最終検証： 29日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
136806
ウェーハサイズ：
不明
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
This highly capable semiconductor etch tool was sparingly used (only a few hours per week) and meticulously maintained under service agreements throughout its operational life. Before decommissioning, it was in excellent working condition and has since been stored carefully. Key Features: Cassette to Cassette Handling Designed for silicon etching with gases plumbed for SF6, C4F8, N2, O2, and Ar Includes an add-on module for XeF2 isotropic silicon etching Tooling compatible with both 100 mm and 150 mm wafers Unique cyclical etching capability: alternating phases of etch and passivation enable deep, highly anisotropic etching results Capable of etching depths exceeding 500 microns and aspect ratios up to 20:1 with exceptional precision This STS ASE system remains a top choice for deep reactive-ion etching applications requiring fine control and high aspect ratio trenches, widely used in MEMS and microfabrication research. Contact for further details and pricing.OEMモデルの説明
提供なしドキュメント
ドキュメントなし