説明
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.構成
構成なしOEMモデルの説明
提供なしドキュメント
ドキュメントなし
ULVAC
NE-950
カテゴリ
Dry / Plasma Etch
最終検証： 30日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
135818
ウェーハサイズ：
不明
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.構成
構成なしOEMモデルの説明
提供なしドキュメント
ドキュメントなし