説明

I. Basic Equipment Information • Applicable Wafer Size: 8-inch (Φ200mm) Notch (JEITA Standard) • Structure: L0 Transfer Chamber + L1 Cassette Chamber + L2 Alignment Chamber + L3 Process Etching Chamber + SMIF Loading II. Chamber Module Specifications L0 Transfer Chamber • Material: Aluminum alloy rectangular chamber • Vacuum System: DRP dry pump for rough pumping • Ultimate Vacuum: ≤10 Pa • Pump-down Time: Atmospheric pressure → 10 Pa in ≤10 minutes • Leak Rate: ≤1.0×10⁻³ Pa·m³/s • Transfer Load Capacity: Max. 2000g L1 Cassette Chamber • Cassette Specifications: 8-inch, 25-slot / 13-slot • Applicable Wafer Thickness: 400–600μm (25-slot), 600–800μm (13-slot) • Vacuum: ≤10 Pa • Pump-down Time: Atmospheric pressure → 10 Pa in ≤10 minutes • Leak Rate: ≤1.0×10⁻³ Pa·m³/s • Configuration: SMIF Loader for automated loading L2 Alignment Chamber • Type: Drop-type alignment (Notch detection) • No independent vacuum pump set L3 Etching Chamber (Core) • Ultimate Vacuum: ≤1.0×10⁻³ Pa • Pump-down Time: Atmospheric pressure → 2.7×10⁻³ Pa in ≤10 minutes • Leak Rate: ≤5.0×10⁻⁵ Pa·m³/s • Helium Leak Rate: ≤5.0×10⁻⁸ Pa·m³/s • Discharge Pressure: 0.07–6.7 Pa • Exhaust System: Turbo-Molecular Pump (TMP) + Dry Pump (DRP) + Automatic Pressure Controller (APC) • Chamber Heating: 50°C Bake-out • Shield Heating: Up to 200°C III. RF and Process Parameters • Upper RF (Source Power): 13.56 MHz / 1000 W • Lower RF (Bias Power): 12.5 MHz / 600 W • Wafer Clamping: Electrostatic Chuck (ESC) • Temperature Control: Chiller (-20°C to +40°C) • Wafer Temperature Control: Helium Back-cooling (He) • Temperature Uniformity: ±3°C Process Performance • SiO₂ Etch Uniformity (Within-wafer): Within ±5% • SiO₂ Etch Uniformity (Wafer-to-wafer): Within ±5% • Photoresist Etch Rate: > 100 nm/min • Particle Level: < 20 particles (> 0.3 μm) • Wafer Transfer Test: 1,000 consecutive wafers without failure IV. Gas Line Parameters (MFC) • Number of Channels: Up to 8 • Configuration: Ar, O₂, N₂, CF₄ • Helium Back-cooling: ≤ 1.0 sccm at 1000 Pa V. Installation and Utilities Dimensions and Weight • Main Unit: W1917 × D2002 × H2251 mm • Total Weight: Approx. 1300 kg • Electrical Control Cabinet: Approx. 230 kg Power Supply • 3-phase 200 V ±10 V, 60 Hz, Approx. 26 kVA Cooling Water • L0/L1 DRP: Flow rate 1.5–3.0 L/min • L3 DRP: Flow rate 3.0–8.0 L/min • Chiller: Flow rate 15 L/min • Water Temperature: 20–30°C Process Gas • Compressed Dry Air (CDA): 0.6–0.9 MPa • Dry Air: Dew point below -40°C • N₂: 0.2–0.4 MPa • He: 0.1–0.4 MPa • Process Gas: 0.05–0.10 MPa Grounding • Type A Grounding: Grounding resistance ≤ 10 Ω VI. Safety and Standards • Emergency Stop Button, High-Voltage Protection, High-Temperature Protection, Leakage Protection • Three-Level Interlock: A (Emergency Shutdown), B (Total Shutdown), C (Process Shutdown) • Compliance: S-Mark, KC Certification