説明
Vertical Furnace構成
構成なしOEMモデルの説明
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.ドキュメント
ドキュメントなし
カテゴリ
Furnaces / Diffusion
最終検証： 19日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
147639
ウェーハサイズ：
6"/150mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
CENTROTHERM
c.ACTIVATOR 150
カテゴリ
Furnaces / Diffusion
最終検証： 19日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
147639
ウェーハサイズ：
6"/150mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Vertical Furnace構成
構成なしOEMモデルの説明
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.ドキュメント
ドキュメントなし