説明

説明なし

構成

details attached. - Tube # 1 – Atmospheric Wet or Dry Oxidation using Nitrogen, Oxygen, Hydrogen and a Trans-LC Bubbler at temperatures up to 1200° Celsius - Tube # 2 – LPCVD of Silicon Nitride using Nitrogen, Ammonia and Dichlorosilane at temperatures up to 850º Celsius - Tube # 3 – LPCVD of Silicon Dioxide using Nitrogen, Oxygen and a TEOS Bubbler at temperatures up to 800º Celsius - Tube # 4 – LPCVD of Polysilicon using Nitrogen and 2% Silane at temperatures up to 650º Celsius System Features - Through-the-Wall Sleeve Assembly - Process up to twenty five (25) - 150mm or 100mm diameter wafers in each tube - Microprocessor Control System - Mass Flow Controlled Gas System - Low Pressure Vacuum Control System for Tubes 2, 3 and 4 - Trans-LC Liquid Source Vapor Delivery System for Tube # 1 - TEOS Liquid Source Vapor Delivery System for Tube # 3 - Standby State for LPCVD Tubes – Allows LPCVD tubes to be kept at low temperature and to minimize Nitrogen usage - Laminar Flow HEPA filtered Loading Station - Cantilevered Loading – no particulate generation - Comprehensive Safety System - SEMI S2, S8 and CE Compliant