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SEN CORPORATION / SUMITOMO NV GSD HE3
    説明
    High Energy Implanter
    構成
    構成なし
    OEMモデルの説明
    The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.
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    SEN CORPORATION / SUMITOMO

    NV GSD HE3

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    検証済み

    カテゴリ
    High Energy

    最終検証: 9日前

    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    不明


    製品ID:

    94628


    ウェーハサイズ:

    12"/300mm


    ヴィンテージ:

    不明

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    同様のリスト
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    SEN CORPORATION / SUMITOMO NV GSD HE3

    SEN CORPORATION / SUMITOMO

    NV GSD HE3

    High Energy
    ヴィンテージ: 0状態: 中古
    最終確認9日前

    SEN CORPORATION / SUMITOMO

    NV GSD HE3

    verified-listing-icon
    検証済み
    カテゴリ
    High Energy
    最終検証: 9日前
    listing-photo-620a0add485b409886898a09cf004cd1-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    不明


    製品ID:

    94628


    ウェーハサイズ:

    12"/300mm


    ヴィンテージ:

    不明


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    説明
    High Energy Implanter
    構成
    構成なし
    OEMモデルの説明
    The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.
    ドキュメント

    ドキュメントなし

    同様のリスト
    すべて表示
    SEN CORPORATION / SUMITOMO NV GSD HE3

    SEN CORPORATION / SUMITOMO

    NV GSD HE3

    High Energyヴィンテージ: 0状態: 中古最終検証: 9日前
    SEN CORPORATION / SUMITOMO NV GSD HE3

    SEN CORPORATION / SUMITOMO

    NV GSD HE3

    High Energyヴィンテージ: 0状態: 中古最終検証: 9日前
    SEN CORPORATION / SUMITOMO NV GSD HE3

    SEN CORPORATION / SUMITOMO

    NV GSD HE3

    High Energyヴィンテージ: 0状態: 中古最終検証: 60日以上前