説明
説明なし構成
Details Attached Maximum implant energy - 160 keV Beam current range - 0.5 - 8mA Wafer sizes - 3", 4", 5" 6" capable End station - Manual load Automatic wafer handling - No AT4 Source - Standard Gas box - 4 ELB strings Vacuum - Dry pump + diffusion pump Control system - Standard console Included Disks • 4” 2-pt clamp (2) • 6” Clampless (4) • 4” Clampless (2) • 6” Full Ring • 4” Full Ring 0 deg. •4” Full Ring (4) •3” 2-pt •3” Full Ring Spare Parts •Ion Source (2) •Manipulator (2) •Flag Faraday (2) •Source Bushing (2) •Source Cooling Flange (2) •Source Isolation ValveOEMモデルの説明
The AXCELIS NV 10-160 is a high-energy ion implanter, specifically designed for implanting ions into bare silicon wafers. It operates at 60 keV energy, and its implantation process allows for precise dosing in the range of 1 to 5∙10^15 ions per square centimeter. After implantation, the wafers can be annealed at 600°C for 20 minutes to activate and optimize the implanted ions' performance. The AXCELIS NV 10-160 is a powerful tool used in semiconductor manufacturing for creating controlled doping profiles and modifying material properties in silicon wafers, essential for producing advanced semiconductor devices.ドキュメント
AXCELIS
NV 10 160
カテゴリ
Medium Current
最終検証： 3日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
150769
ウェーハサイズ：
3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available