説明
Btah構成
ID_HiEnrgOEMモデルの説明
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.ドキュメント
ドキュメントなし
カテゴリ
Medium Current
最終検証： 12日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
144795
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2011
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HE3
カテゴリ
Medium Current
最終検証： 12日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
144795
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2011
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Btah構成
ID_HiEnrgOEMモデルの説明
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.ドキュメント
ドキュメントなし