メインコンテンツにスキップ
We value your privacy

We and our selected partners use cookies to enhance your browsing experience, serve personalized content, and analyze our traffic. By clicking "Accept All", you consent to our use of cookies. 続きを読む

Moov logo

Moov Icon
PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
  • PLASMATHERM LAPECVD
説明
Deposition LAPECVD
構成
構成なし
OEMモデルの説明
Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications. The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system. Hardware: -Cassette-to-Cassette Handling: - Multi-substrate batch processing -Dual cassettes -Platen heating up to 350°C -Upper electrode RF power at 13.56 MHz with optional MFD -Up to 8 gas channels with digital MFCs -Thermally managed reactor design—up to 175°C for internal walls and shower head
ドキュメント

ドキュメントなし

verified-listing-icon

検証済み

カテゴリ
PECVD

最終検証: 60日以上前

主なアイテムの詳細

状態:

Used


稼働ステータス:

不明


製品ID:

117128


ウェーハサイズ:

不明


ヴィンテージ:

不明


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

PLASMATHERM

LAPECVD

verified-listing-icon
検証済み
カテゴリ
PECVD
最終検証: 60日以上前
listing-photo-4082984ca0814ce1b193be9b766ae9be-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
主なアイテムの詳細

状態:

Used


稼働ステータス:

不明


製品ID:

117128


ウェーハサイズ:

不明


ヴィンテージ:

不明


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Deposition LAPECVD
構成
構成なし
OEMモデルの説明
Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications. The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system. Hardware: -Cassette-to-Cassette Handling: - Multi-substrate batch processing -Dual cassettes -Platen heating up to 350°C -Upper electrode RF power at 13.56 MHz with optional MFD -Up to 8 gas channels with digital MFCs -Thermally managed reactor design—up to 175°C for internal walls and shower head
ドキュメント

ドキュメントなし