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LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
  • LOGITECH 1WBT2
説明
Key Features: -Automated process cycle minimizes operator input -Excellent wafer to support disc parallelism -Touch button control of bonding parameters -Bubble free bond -4" (102 mm) wafer capacity -Single or multiple wafer capacity (technically this unit is a single unit cause the other 2 stations are removed) Description: Bonding techniques for processing thin and fragile II-VI and III-V semiconductor wafers such as silicon, GaAs and InP require delicate handling procedures. Laboratories bonding such materials need to maintain the highest quality of sample yield and minimize breakage of these expensive materials in wafer preparation process. The Logitech Wafer Substrate Bonding Unit has been designed to meet such stringent requirements. This highly automated machine incorporates both vacuum and pressure bonding facilities. It allows the operator to mount and bond up to three part or whole wafers up to a diameter of 4" (102 mm) prior to further processing. The system produces consistently high standards of wafers to support disc parallelism, irrespective of whether one large wafer or a number of smaller wafers of differing thickness are being mounted and bonded. Touch button control of the process display on the machine's front panel allows all process parameters to be accurately controlled. This includes a programmable bonding temperature and vacuum to produce the required environment for a specific sample type.
構成
The Unit's Serial Number Tag Reads: Model Number: 1WBT2 Serial Number: 32-08-99 Power Requirements: 110 V, 60 A, Single Phase, 13 A This unit has 2 of the bonding stations removed but I believe it will still function as a single unit. Each bonding unit costs about $6500.00 from the manufacturer to replace. Specifications: Maximum Support Disc Size: Diameter: 108 mm (4.25") Thickness: 8 mm (0.31") Maximum Capacity: 1* or 3*** wafers Overall Dimensions: 350 mm H x 580 mm D x 960 mm L (13.78" x 22.83" x 37.80") Weight: 57 kg (126 lbs) Power Requirements: 1.44 kW (110 V) Water Supply Requirements: Mains pressure cold water Pressurised Air (Optional): Regulated to 2 bar ±0.2 bar maximum Notes: *: Refers to single station unit ***: Refers to three station unit
OEMモデルの説明
提供なし
ドキュメント

ドキュメントなし

PREFERRED
 
SELLER
verified-listing-icon

検証済み

カテゴリ
Wafer Bonders

最終検証: 6日前

Buyer pays 12% premium of final sale price
主なアイテムの詳細

状態:

Parts Tool


稼働ステータス:

Deinstalled / Uncrated


製品ID:

126030


ウェーハサイズ:

4"/100mm


ヴィンテージ:

1999


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
PREFERRED
 
SELLER

LOGITECH

1WBT2

verified-listing-icon
検証済み
カテゴリ
Wafer Bonders
最終検証: 6日前
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Buyer pays 12% premium of final sale price
主なアイテムの詳細

状態:

Parts Tool


稼働ステータス:

Deinstalled / Uncrated


製品ID:

126030


ウェーハサイズ:

4"/100mm


ヴィンテージ:

1999


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Key Features: -Automated process cycle minimizes operator input -Excellent wafer to support disc parallelism -Touch button control of bonding parameters -Bubble free bond -4" (102 mm) wafer capacity -Single or multiple wafer capacity (technically this unit is a single unit cause the other 2 stations are removed) Description: Bonding techniques for processing thin and fragile II-VI and III-V semiconductor wafers such as silicon, GaAs and InP require delicate handling procedures. Laboratories bonding such materials need to maintain the highest quality of sample yield and minimize breakage of these expensive materials in wafer preparation process. The Logitech Wafer Substrate Bonding Unit has been designed to meet such stringent requirements. This highly automated machine incorporates both vacuum and pressure bonding facilities. It allows the operator to mount and bond up to three part or whole wafers up to a diameter of 4" (102 mm) prior to further processing. The system produces consistently high standards of wafers to support disc parallelism, irrespective of whether one large wafer or a number of smaller wafers of differing thickness are being mounted and bonded. Touch button control of the process display on the machine's front panel allows all process parameters to be accurately controlled. This includes a programmable bonding temperature and vacuum to produce the required environment for a specific sample type.
構成
The Unit's Serial Number Tag Reads: Model Number: 1WBT2 Serial Number: 32-08-99 Power Requirements: 110 V, 60 A, Single Phase, 13 A This unit has 2 of the bonding stations removed but I believe it will still function as a single unit. Each bonding unit costs about $6500.00 from the manufacturer to replace. Specifications: Maximum Support Disc Size: Diameter: 108 mm (4.25") Thickness: 8 mm (0.31") Maximum Capacity: 1* or 3*** wafers Overall Dimensions: 350 mm H x 580 mm D x 960 mm L (13.78" x 22.83" x 37.80") Weight: 57 kg (126 lbs) Power Requirements: 1.44 kW (110 V) Water Supply Requirements: Mains pressure cold water Pressurised Air (Optional): Regulated to 2 bar ±0.2 bar maximum Notes: *: Refers to single station unit ***: Refers to three station unit
OEMモデルの説明
提供なし
ドキュメント

ドキュメントなし