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APPLIED MATERIALS (AMAT) P5000 ETCH
  • APPLIED MATERIALS (AMAT) P5000 ETCH
  • APPLIED MATERIALS (AMAT) P5000 ETCH
  • APPLIED MATERIALS (AMAT) P5000 ETCH
説明
Metal Etch
構成
構成なし
OEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
ドキュメント

ドキュメントなし

APPLIED MATERIALS (AMAT)

P5000 ETCH

verified-listing-icon

検証済み

カテゴリ
Dry / Plasma Etch

最終検証: 21日前

主なアイテムの詳細

状態:

Used


稼働ステータス:

不明


製品ID:

118511


ウェーハサイズ:

不明


ヴィンテージ:

不明


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示

APPLIED MATERIALS (AMAT)

P5000 ETCH

verified-listing-icon
検証済み
カテゴリ
Dry / Plasma Etch
最終検証: 21日前
listing-photo-7c5df89969a84ad8a03772103db9994e-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
主なアイテムの詳細

状態:

Used


稼働ステータス:

不明


製品ID:

118511


ウェーハサイズ:

不明


ヴィンテージ:

不明


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Metal Etch
構成
構成なし
OEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
ドキュメント

ドキュメントなし

同様のリスト
すべて表示