説明
説明なし構成
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEMモデルの説明
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.ドキュメント
ドキュメントなし
STS
HRM
検証済み
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
110058
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
HRM
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
110058
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEMモデルの説明
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.ドキュメント
ドキュメントなし