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LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"
    説明
    De-installed Good condition
    構成
    構成なし
    OEMモデルの説明
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    ドキュメント

    ドキュメントなし

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    verified-listing-icon

    検証済み

    カテゴリ
    PECVD

    最終検証: 60日以上前

    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    Deinstalled


    製品ID:

    108661


    ウェーハサイズ:

    不明


    ヴィンテージ:

    1998


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    同様のリスト
    すべて表示
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVD
    ヴィンテージ: 1995状態: 中古
    最終確認30日以上前

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    verified-listing-icon
    検証済み
    カテゴリ
    PECVD
    最終検証: 60日以上前
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    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    Deinstalled


    製品ID:

    108661


    ウェーハサイズ:

    不明


    ヴィンテージ:

    1998


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    説明
    De-installed Good condition
    構成
    構成なし
    OEMモデルの説明
    The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.
    ドキュメント

    ドキュメントなし

    同様のリスト
    すべて表示
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVDヴィンテージ: 1995状態: 中古最終検証:30日以上前
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVDヴィンテージ: 0状態: 中古最終検証:60日以上前
    LAM RESEARCH / NOVELLUS CONCEPT ONE "C1"

    LAM RESEARCH / NOVELLUS

    CONCEPT ONE "C1"

    PECVDヴィンテージ: 1998状態: 中古最終検証:60日以上前