説明
Wafer Type - FLAT Install Type - Through-the-wall / Stand Alone Frame Type - C1-150 Chamber Type - Dielectric Process Types - SiO2, SiN, Nitride Directory of Chamber Types for Box 3 - Process Tungsten - Tungsten Dep. Dielectric - SiO2, SiN, Nitride, TEOS Signal Lamp Tower - YES Robot Type - Single Arm Front Monitor - LCD Side Monitor- LCD Integrated SMIF - NO SECS / GEMS- YES Micro Contamination Option- YES Process Type- Dielectric Heater Block P/N- Pinned, scribed (CPS) Shower Head P/N- OEM shower heads Digital Dynamics IOC- NO Heated Valves- YES Gate Valve Mfg & Model - VAT RF Match Type- Other Mercury HF RF Generator - RFG3000 LF RF Generator- PDX1400 Sigma 6 TEOS Cabinet- NO Duraflo Cabinet- NO End Point Detector- YES Manufacturer- Edwards Included With System- YES Number Of Channels - 8- channel / 11 - channel Gas Line # Gas Flow (sccm) MFC Model 1 N2 5 1660 2 SiH4 1 1660 3 SiH4 2% 2 1660 4 PH3 2 1660 5 N2O 20 1660 6 NH3 5 1660 7 C2F6 2 1660 8 O2 20 1660 9 1660 10 1660 11 1660 *gases not in a specific order構成
PECVD SilaneOEMモデルの説明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.ドキュメント
ドキュメントなし
カテゴリ
PECVD
最終検証： 今日
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
150808
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2009
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
カテゴリ
PECVD
最終検証： 今日
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
150808
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2009
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Wafer Type - FLAT Install Type - Through-the-wall / Stand Alone Frame Type - C1-150 Chamber Type - Dielectric Process Types - SiO2, SiN, Nitride Directory of Chamber Types for Box 3 - Process Tungsten - Tungsten Dep. Dielectric - SiO2, SiN, Nitride, TEOS Signal Lamp Tower - YES Robot Type - Single Arm Front Monitor - LCD Side Monitor- LCD Integrated SMIF - NO SECS / GEMS- YES Micro Contamination Option- YES Process Type- Dielectric Heater Block P/N- Pinned, scribed (CPS) Shower Head P/N- OEM shower heads Digital Dynamics IOC- NO Heated Valves- YES Gate Valve Mfg & Model - VAT RF Match Type- Other Mercury HF RF Generator - RFG3000 LF RF Generator- PDX1400 Sigma 6 TEOS Cabinet- NO Duraflo Cabinet- NO End Point Detector- YES Manufacturer- Edwards Included With System- YES Number Of Channels - 8- channel / 11 - channel Gas Line # Gas Flow (sccm) MFC Model 1 N2 5 1660 2 SiH4 1 1660 3 SiH4 2% 2 1660 4 PH3 2 1660 5 N2O 20 1660 6 NH3 5 1660 7 C2F6 2 1660 8 O2 20 1660 9 1660 10 1660 11 1660 *gases not in a specific order構成
PECVD SilaneOEMモデルの説明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.ドキュメント
ドキュメントなし