説明
Oxford Plasmalab 133+ RIE CL Reactive Ion Etcher Windows PC, user friendly interface GUI構成
Supports wafer sizes up to 300mm (330mm Platen) Mechanical chuck RIE set up for GaN Etch RF Power: 600W, 13.56MHz Water cooled electrode 10C-80C End point detection: Verity Optical emission spectroscopy (200-800nm) Gas pod with 8 lines including following 7 MFCs: Ar – 100sccm CL2 – 100sccm BCL3 – 100sccm N2O – 200sccm CHF3 – 200sccm NH3 -100sccm CH4 – 50sccmOEMモデルの説明
The Oxford Plasmalab 133 is a system used for plasma etching through a process called Reactive Ion Etching (RIE). This refurbished system is designed for GaN etching and has a platen that measures 330mm. It has an RF power of 600W at a frequency of 13.56MHz and features a water-cooled electrode that can operate within a temperature range of 10°C to 80°C. The system also includes a load lock with a turbo pump and an end-point detection system that utilizes Verity Optical emission spectroscopy within the range of 200-800nm. The gas pod of the system has six lines, including mass flow controllers for gases such as Ar, CL, BCL3, and N2O.ドキュメント
ドキュメントなし
カテゴリ
PECVD
最終検証： 7日前
主なアイテムの詳細
状態：
Refurbished
稼働ステータス:
不明
製品ID：
138678
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2004
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
OXFORD
PLASMALAB 133
カテゴリ
PECVD
最終検証： 7日前
主なアイテムの詳細
状態：
Refurbished
稼働ステータス:
不明
製品ID：
138678
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2004
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Oxford Plasmalab 133+ RIE CL Reactive Ion Etcher Windows PC, user friendly interface GUI構成
Supports wafer sizes up to 300mm (330mm Platen) Mechanical chuck RIE set up for GaN Etch RF Power: 600W, 13.56MHz Water cooled electrode 10C-80C End point detection: Verity Optical emission spectroscopy (200-800nm) Gas pod with 8 lines including following 7 MFCs: Ar – 100sccm CL2 – 100sccm BCL3 – 100sccm N2O – 200sccm CHF3 – 200sccm NH3 -100sccm CH4 – 50sccmOEMモデルの説明
The Oxford Plasmalab 133 is a system used for plasma etching through a process called Reactive Ion Etching (RIE). This refurbished system is designed for GaN etching and has a platen that measures 330mm. It has an RF power of 600W at a frequency of 13.56MHz and features a water-cooled electrode that can operate within a temperature range of 10°C to 80°C. The system also includes a load lock with a turbo pump and an end-point detection system that utilizes Verity Optical emission spectroscopy within the range of 200-800nm. The gas pod of the system has six lines, including mass flow controllers for gases such as Ar, CL, BCL3, and N2O.ドキュメント
ドキュメントなし