説明
Nikon KrF lithography machines use 248nm wavelength KrF excimer lasers as exposure light sources, which are suitable for more sophisticated semiconductor processes and are widely used in the manufacture of high-performance semiconductor devices, including microprocessors, dynamic random access memory (DRAM), and complex logic and mixed signal chips. These lithography machines are key equipment for achieving high-precision semiconductor device manufacturing, and play an important role in 4-inch, 6-inch, 8-inch and 12-inch wafer production lines, providing semiconductor manufacturers with flexibility and efficient production capabilities.構成
0.20 0.68 4:1 25*33 LSA:40 FIA:45OEMモデルの説明
The system offers a resolution of 150 nm or better with a numerical aperture (NA) of 0.68. It utilizes a KrF excimer laser with a wavelength of 248 nm as the exposure light source. The reduction ratio is 1:4, and the exposure field measures 25 × 33 mm. The alignment accuracy, using the EGA method with |M| + 3σ, is equal to or less than 35 nm.ドキュメント
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NIKON
NSR-S204B
カテゴリ
Steppers & Scanners
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
131672
ウェーハサイズ：
4"/100mm, 6"/150mm, 8"/200mm, 12"/300mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Nikon KrF lithography machines use 248nm wavelength KrF excimer lasers as exposure light sources, which are suitable for more sophisticated semiconductor processes and are widely used in the manufacture of high-performance semiconductor devices, including microprocessors, dynamic random access memory (DRAM), and complex logic and mixed signal chips. These lithography machines are key equipment for achieving high-precision semiconductor device manufacturing, and play an important role in 4-inch, 6-inch, 8-inch and 12-inch wafer production lines, providing semiconductor manufacturers with flexibility and efficient production capabilities.構成
0.20 0.68 4:1 25*33 LSA:40 FIA:45OEMモデルの説明
The system offers a resolution of 150 nm or better with a numerical aperture (NA) of 0.68. It utilizes a KrF excimer laser with a wavelength of 248 nm as the exposure light source. The reduction ratio is 1:4, and the exposure field measures 25 × 33 mm. The alignment accuracy, using the EGA method with |M| + 3σ, is equal to or less than 35 nm.ドキュメント
ドキュメントなし