STS Multiplex ICP Advanced Oxide Etcher (AOE) System, 8"
Process: Deep Reactive Ion Etcher (DRIE)
Inductively coupled plasma
Chuck and clamps, 4"-8"
Single wafer with carousel
(2) Load locks
Gases: CH4, C3F8, C4F8, SF6, CHF3, Ar, O2, He, N2, H2
Process pressure range: 4-95 mTorr
Plasma power coil: 13.56 MHz, 3 kW, Platen: 13.56 MHz, 1 kW (Maximum)
Achived uniformity (Oxide): ±3 % within 100 mm Si wafer
 
Oxide etching with recipe: SiO2
Etch rate (Thermal oxide): ~318 nm/min
Wafer variability: <4 %
Selectivity over PR: >3.4:1 (92 nm/min for 700-1.2 PR, hard bake 1 min at 110°C)
Selectivity over Si: >9.5:1 (33 nm/min for <100> P-type Si)
 
Silicon etching with recipe: Si
Platform: BOSCH
Etch rate (<100> P-type Si): ~675 nm/min
Wafer variability: <5 %
Selectivity over PR: >3.4:1 (189 nm/min for 700-1.2 PR, hard bake 1 min at 110°C)
Selectivity over SiO2: >3.6:1 (218 nm/min for wet thermal oxide)

STS provides advanced wafer processing solutions to the world's leading semiconductor and microelectronic device manufacturers.

The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.

MULTIPLEX ICP

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STS

MULTIPLEX ICP

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