説明
Condition: Complete / Working at removal Status: De-installed構成
STS Multiplex ICP AOE Pro Advanced Oxide Etcher (AOE) Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEMモデルの説明
The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.ドキュメント
ドキュメントなし
STS
MULTIPLEX ICP
検証済み
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
111180
ウェーハサイズ：
2"/50mm, 4"/100mm, 6"/150mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
STS
MULTIPLEX ICP
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
111180
ウェーハサイズ：
2"/50mm, 4"/100mm, 6"/150mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Condition: Complete / Working at removal Status: De-installed構成
STS Multiplex ICP AOE Pro Advanced Oxide Etcher (AOE) Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEMモデルの説明
The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.ドキュメント
ドキュメントなし