説明
説明なし構成
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEMモデルの説明
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.ドキュメント
ドキュメントなし
PLASMATHERM
790
検証済み
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
19003
ウェーハサイズ：
8"/200mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
PLASMATHERM
790
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
19003
ウェーハサイズ：
8"/200mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEMモデルの説明
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.ドキュメント
ドキュメントなし