説明
STS Deep Reactive Ion Si Etcher (Bosch Process) The STS Multiplex DRIE system uses the Bosch process to etch silicon deeply and anisotropic. In addition to the platen RF power supply used for reactive ion etching (RIE), the system is equipped with an inductively coupled plasma (ICP) RF source, which allows independent control of plasma density and DC bias. The system features a water-cooled electrode and helium backside cooling to maintain the sample at a low temperature during processing. It is designed to accommodate and etch 200 mm wafers.構成
構成なしOEMモデルの説明
The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.ドキュメント
ドキュメントなし
検証済み
カテゴリ
Dry / Plasma Etch
最終検証： 3日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Deinstalled
製品ID：
64816
ウェーハサイズ：
8"/200mm
ヴィンテージ：
1997
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
STS
MULTIPLEX ICP
カテゴリ
Dry / Plasma Etch
最終検証： 3日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Deinstalled
製品ID：
64816
ウェーハサイズ：
8"/200mm
ヴィンテージ：
1997
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
STS Deep Reactive Ion Si Etcher (Bosch Process) The STS Multiplex DRIE system uses the Bosch process to etch silicon deeply and anisotropic. In addition to the platen RF power supply used for reactive ion etching (RIE), the system is equipped with an inductively coupled plasma (ICP) RF source, which allows independent control of plasma density and DC bias. The system features a water-cooled electrode and helium backside cooling to maintain the sample at a low temperature during processing. It is designed to accommodate and etch 200 mm wafers.構成
構成なしOEMモデルの説明
The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.ドキュメント
ドキュメントなし